Evidence of Substrate Enhanced High Energy Tails in the Distribution Function of Deep Submicron MOSFETs by Light Emission Measurements

This paper reports direct experimental evidence that the high energy tail of the hot carrier luminescence distribution of deep submicron silicon MOSFETs is essentially modified by the application of a substrate voltage. The bias and temperature dependence of the phenomenon are consistent with an enhancement of the high energy tail of the energy distribution due to a second impact ionization event accuring at the drain to substrate junction.