Excimer laser induced deposition of InP: Crystallographic and mechanistic studies.

The 193 nm excimer laser is used to deposit InP thin films on several substrates, via photochemical decomposition of (CH3)3 and P(CH3)3 gas-phase precursors. The characteristics of the deposited films are studied over a wide range of conditions. A photochemical model is proposed which explains the stoichiometry and rate at which the film deposits. Approximate energy densities are given for the onset of (in order of increasing energy density) In-precursor photochemistry, P-precursor photochemistry, CH (x) photochemistry, laser induced crystallization, and laser damage.