Excitonic Transitions in Lattice Matched Ga sub (1-x) In sub x As/InP Quantum Wells.

We present a study of the excitons in quantum wells of GaInAs grown on InP substrates. Well resolved optical transitions between confined particle states were measured by photoluminescence and photocurrent excitation. Well dimensions were varied from 10 to 200angstroms, as ascertained by high resolution transmission microscopy and x-ray diffraction. The combination of a detailed optical and structural characterization allows for a comparison with theory. Good agreement is obtained with calculations based on effective mass approximation which include band non- parabolicity effects and contain no adjustable parameters.