Excitonic Transitions in Strained Layer In sub x Ga sub (1- x) As/GaAs Quantum Wells.
01 January 1989
A study of the excitonic transitions in pseudomorphic quantum wells of In sub x Ga sub (1-x) As grown on GaAs substrates is presented. The experimental data obtained by photoluminescence excitation and absorption techniques agrees very well with our theoretical model. The model is based on phenomenological deformation potential theory and includes band non-parabolicity and valence band mixing terms. The same model without any adjustable parameters, was applied successfully also to the InGaAs/InP system before.