Extending the Advantages of GaInAs/AlInAs/InP MODFETs Through Pseudomorphic Engineering and Optical Probing

GaInAs/AlInAs/InP heterostructures are more attractive than the GaAs substrate based heterostructures for the fabrication of MODFETs because of the availability of a significantly larger conduction-baned discontinuity as well as a higher room-temperature low field electron mobility and the attainability of a higher peak electron velocity in the channel. The ability of their thin channel and barrier layers to accommodate considerable strains in pseudomorphic Ga sub 0.4 In sub 0.6 As/Al sub 0.55 In sub 0.45 As are shown to be of very high quality through X-ray diffraction, Hall Shubnikov-de Haas measurements, transmission electron microscopy, and optical absorption.