Extremely High Quality Ga(0.47) In(0.53)As/InP Quantum Wells Grown by Chemical Beam Epitaxy.

We have prepared by chemical beam epitaxy extremely high quality Ga(0.47) In(0.53)As/InP quantum wells with thickness as thin as 6angstroms. Emission as short as 1.09microns at 2K (1.14microns at 300K) was obtained. Very sharp intense efficient luminescence peaks due to excitonic transitions were obtained from all quantum wells. The photoluminescence (PL) linewidths at 2K were the narrowest that have been ever reported for Ga(0.47)In (0.53)As quantum wells grown by any technique. In fact, such narrow linewidths for Ga(0.47)In(0.53)As quantum wells are, for the first time, at least equal to the narrowest linewidths ever reported for the perfected GaAs/AlAs and GaAs/Al(x)Ga (1-x)As quantum wells.