Fabrication and Performance of High Speed InGaAs APDs

01 January 1990

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Over the last several years, the technology for fabrication of long wavelength avalanche photodiodes (APDs) has matured considerably. APDs are now in volume manufacture and have become the detector of choice for most long-haul, high bit-rate applications. These applications place stringent demands on such device parameters as dark current, bandwidth, gain uniformity and operating lifetime.