Fabrication of Gatable Submicron Channels in AlGaAs-GaAs Heterostructures

A new, simplied process has been developed for fabricating submicron Al sub (x) Ga sub (1-x) As-GaAs heterostructure devices for low temperature transport studies, with the advantage of gatability. This process utilizes electron beam lithography, photolithography, and wet-etching techniques to laterally confine the two dimensional electron gas (2DEG), and possesses the unique feature that the metal etch mask for the e sup (-) beam-defined narrow section is deposited directly on top of the heterostructure surface, allowing for use as a gate.