Fabrication of low dark current planar photodiodes using an open-tube method for Zn-diffusion into InP and In(0.53)Ga(0. 47)As.
01 January 1984
A process for fabricating planar low dark current InP and In (0.53)Ga(0.47)As/InP based photodetectors is described. The process utilizes sandwich films of ZnF(2) and a SiO(2), borosilicate, or Al(2)O(3) encapsulant, which yield localized p-n junctions in an open tube air-ambient. Dark currents as low as 5 x 10 (-12)A and 3 x 10(-10)A at 10V reverse bias voltage have been achieved in 75 micron diameter unpassivated planar diodes of InP and In(0.53)Ga(0.47)As respectively.