Fabrication of metal-epitaxial insulator-semiconductor field effect transistors (MEISFET's) using molecular beam epitaxy of CaF2 on Si.

Fabrication of metal-epitaxial insulator-semiconductor field effect transistors (MEISFETs) by molecular beam epitaxial growth of CaF2 on Si is reported for the first time. These devices have a room temperature electron mobility of 300 cm (2)/V-sec and threshold voltages between -0.5 and 1.0V. The breakdown voltage of the films ranges from >~10(5) V/cm to >~10(6) V/cm in different regions of the film. These devices will be important for the characterization and improvement of the interface transport properties of the CaF2 Si system.