Fabry Perot Laser Arrays Covering C+L Band Obtained by Selective Area Growth on InP-SiO2/Si Substrate
10 May 2020
Fabry-Perot laser arrays based on vertical p-i-n laser diode structures grown on InP layer directly bonded to Si wafer is presented. Lasing emission covering the C+L bands is achieved by means of a single-epitaxy Selective Area Growth (SAG) technology.
