Fe-Implantation in In sub (0.53) Ga sub (0.47) As/InP.
01 January 1989
Single and multiple energy Fe ion implants are performed in n-type InGaAs. Rapid thermal and furnace anneals are used to activate the implanted material. Surface Fe accumulation, multiple Fe peaks and deep in-diffusion of Fe are observed in the secondary ion mass spectrometry depth profiles of the implanted material. The crystal lattice perfection of the annealed material is evaluated qualitatively by photoreflectance measurements.