Femtosecond excitation of non-thermal carrier populations in GaAs quantum wells.
03 October 1985
We report the first observation of non-thermal photoexcited carrier distributions in GaAs quantum well structures at room temperature. We present experimental studies of the ultrafast evolution of these distributions to thermalization which occurs within 200 fs. In addition we are able to determine an estimate of the relative effectiveness of Debye screening and near band edge state filling on the bleaching of the exciton resonance absorption.