Femtosecond Photon Echoes from Band to Band Transitions in GaAs.

We report the first observation of femtosecond photon echoes from the band to band transitions in a bulk semiconductor. The time decay of the echo, found to vary from 3.5 to 11 fs, has allowed us to determine the polarization dephasing rate in GaAs. This rate was found to depend on the carrier density in the experimental range covered, 1.5x10 sup (17) to 7x10 sup (18) cm sup (-3), indicating the dominance of carrier-carrier scattering as the principal dephasing mechanism. The observed functional dependence of the dephasing rate on the carrier density has yielded previously unavailable information on Coulomb screening in a nonequilibrim carrier distribution.