FIR Investigation of GaAs/GaAlAs Heterostructures.
01 January 1984
Experimental and theoretical investigations of the CR linewidth and line position are presented. Oscillations of the linewidth due to screening effects are observed. A theoretical analysis of the linewidth gives important information on residual doping levels and interface qualities in the GaAs/GaAlAs heterostructures. Cyclotron emission experiments reveal impurity associated transitions at energies above the cyclotron energy.