First demonstration of tensile strained GaInNAs/InP multi-quantum-well TM laser emitting at 1.55 μ
21 May 2006
A new tensile strained material system, GaInNAs/InP, has been developed in order to achieve TM lasing around 1.55 mum, for further isolator integration. First static and dynamic evaluation of such GaInNAs/InP multi-quantum-well lasers is reported.