Flicker Noise Properties of Organic Thin-film Transistors

The low frequency noise properties of organic thin film transistors are studied here as function of frequency and bias. Various n-channel and p-channel devices were evaluated and found to exhibit 1/f-type of noise in the 1Hz - 10 kHz range. The drain current noise is found to vary proportionally with drain current. The noise level is comparable or smaller than that found in Si-MOSFETs within the operation region of the devices, owing to the smaller drain currents in organic transistors, although the intrinsic noise is considerably higher in the organic transistors. The viability of using the organic materials in low noise circuits is demonstrated by a ring oscillator.