Floor free 10-Gb/s transmission with directly modulated GaInNAs-GaAs 1.35-mu m laser for metropolitan applications

Among the new semiconductor materials for telecorn devices, the GaInNAs-GaAs structure presents interesting properties for low-cost applications, like high differential gain and high To. Another key aspect of the performance is the behavior of the GaInNAs-GaAs based lasers under high bit rate direct modulation. Here, we demonstrate the dynamic capabilities of GaInNAs-GaAs three-quantum-well ridge structure through 2.5-Gb/s directly modulated laser emission and transmission on standard fiber, in the temperature range 25 degrees C-85 degrees C. Besides transmission is demonstrated up to 10 Gb/s at 25 degrees C on the same fiber, without penalty and bit-error-rate floor.