Focused Ion Beam Induced Copper Artifact Dose Study

Reduced feature dimensions in microelectronic devices has led to a growing reliance on the focused ion beam (FIB) for scanning electron microscopy (SEM) and transmission electron microscopy (TEM) specimen preparation. The introduction of copper for use in electrical interconnects will increase this reliance. Copper, much more so than aluminum, tends to smear when conventional polishing techniques are employed, rendering mechanical polishing unsuitable for quality specimen preparation.