Formation of Buried Layers of Beta-SiC Using Ion Beam Synthesis and Incoherent Lamp Annealing
01 January 1987
It is demonstrated that well defined buried layers of Beta SiC can be grown epitaxially within a silicon substrate. This structure is formed by implanting high doses of carbon ions (>3 x 10 sup 17 C sup + cm sup -2 ) at 200 keV into (100) single crystal silicon which is maintained at a temperature of approximately 550 C.