Four Micron Period Ion-Implanted Bubble Test Circuits.
01 January 1986
Packaged magnetic bubble test circuits made with 4micron period ion-implanted circuits were operated over -55 to +110C. The circuits used bidirectional transfer and non-destructive detection and were made on bismuth-containing magnetic garnet films. Passivated circuits that incorporated an improved transfer conductor design were operated on films with higher Gilbert damping parameters. Potential advantages to using films with lower bubble aspect ratios for ion-implanted circuits are discussed. However, NDRO detection was not realized with these "flat" bubbles.