Free-carrier reduction in vacuum annealed S, Sn, and Ge-doped (100) InP.
01 January 1984
The present study has examined variations in the free-carrier concentration of S, Sn, and Ge-doped (100) InP and Si-doped (100) GaAs induced by vacuum annealing the wafers at 500-550C for periods ranging from 30 minutes to 1 hour. Corrections for the concentration dependence of the conduction electron effective mass have been incorporated analytically. Analysis of the Raman data show that reduction of the free-carrier concentration is observed in all cases.