Frequency effects on plasma deposition and properties of fluorinated silicon nitride films.
27 October 1986
Low hydrogen fluorinated PECVD silicon nitride films were grown using NF sub 3/ SiH sub 4/ N sub 2 feed mixtures with RF excitation below the ion transit frequency, at 200 kHs. Under these conditions higher energy ion bombardment is expected to enhance surface diffusion and chemical reconstruction. Compared to fluorinated silicon nitride deposited at 14MHz under otherwise comparable conditions, the 200kHz films had a lower Si-H bond concentration (