Frequency Response of AlInAs/GaInAs/InP Modulation Doped Field Effect Transistors at Cryogenic Temperatures

This abstract describes the observation of a roll-off rate of 12dB per frequency octave for the microwave power gain of a modulation-doped field effect transistor (MODFET) at 90 K, and a roll-off rate of 6 dB/octave at 300 K. A roll-off rate of 12 dB/octave is not often reported [1], but has been predicted to occur in FETs at sufficiently high frequencies [2].