Frequency Response of an Internal Amplifier in a High-Speed Integrated Circuit Measured by Electro-Optic Sampling.
01 January 1988
The frequency response of an FET amplifier within a high-speed GaAs integrated circuit has been measured directly using ultrashort optical pulses from a gain-switched InGaAsP injection laser and the electro-optic sampling technique. The 3d-B point for the FET amplifier is 4 - 4.5 GHz.