Fully ion-implanted abrupt p-n junction on semi-insulating InP.

This paper reports a fully ion-implanted p-n junction using Si for n layer implant and P/Be co-implant for a shallow p sup + surface layer. C-V measurement has shown an abrupt junction behavior. Mesa diodes have shown an ideality factor of two, a small leakage current, and avalanche breakdown at reverse bias greater than 50V.