Fully optically and electrically interfaced, monolithic 1x12 array of In0.53Ga0.47As/InP p-i-n photodiodes.
01 January 1986
We describe the fabrication of monolithically integrated, 1x12 arrays of In0.53Ga0.47As/InP photodiodes. These devices are fully electrically and optically interfaced, and are useful for fiber-optic system applications. The dark current of each diode at -5 V is 20 nA. and the total packaged capacitance for each device is ~2pF. The average optical coupling efficiency is 64% at 1.3 microns for the diodes, which are not AR-coated. These are, to our knowledge, the first such devices made for use in long-wavelength, optical fiber systems.