Ga sub (0.47) In sub (0.53) As/InP Superlattice Avalanche Photodiode Grown by Metalorganic Chemical Vapor Deposition
01 January 1987
We report the operation of the first Ga sub (0.47) In sub (0.53) As/InP superlattice avalanche photodiode grown by metalorganic chemical vapor deposition. The i layer of the pin structure consists of 100 periods of alternating InP and Ga sub (0.47) In sub (0.53) As layers 100angstroms thick with no intentional doping. Dc multiplication higher than 20, and high speed response with full width at half maximum of 200 ps have been measured.