Ga(0.47)In(0.53)As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operation at 1.53 micron.

Current injection Ga(0.47)In(0.53)As/InP multiquantum well heterostructure lasers operating at 1.53 micron have been successfully prepared by molecular beam epitaxy. These lasers consist of four ~70A Ga(0.47)In(0.53)As wells and three ~150A InP barriers. The threshold current density is 2.7 kA/cm(2). In the temperature range of 10-75C, the threshold-temperature dependence can be described closely by a single temperature dependence coefficient T(C). The measured T(C) 45K, no significant improvement in T(C) observed in these MQW lasers over conventional double heterostructure lasers operating also at 1.5 micron.