GaAlAs/GaAs Floating-Gate Memory Devices with Graded-Gap Injector grown by Molecular Beam Epitaxy

The operation of the first floating-gate memory device in the AlGaAs/GaAs material system is reported and its applicability to dynamic and permanent memories is discussed. Little attention has been given to memory devices in III-V material systems so far, although the storage properties of AlGaAs/GaAs interfaces have been demonstrated. Nevertheless, these have an increasingly important role as new heterojunction active devices are demonstrated and logic integrated circuits are made possible by the development of growth techniques.