GaAs-AlAs Monolithic Microresonator Arrays.

Monolithic optical logic devices 1.5-5microns across are defined by ion-beam assisted etching through a GaAs/AlAs Fabry-Perot structure grown by molecular beam epitaxy. They show reduced energy requirements (more than an order of magnitude smaller than the unetched heterostructure), uniform response over small arrays, negligible crosstalk at 3microns center-center spacing, ~ 150 ps recovery time nd thermal stability at 82 MHz operating frequency. All experiments were performed at room temperature.