GaAs/AlGaAs Inversion Channel Devices for an Integrated Opto-Electronic Technology
01 December 1988
The merits of opto-electronic intergration are now well established. The foremost problem in the realization of monolithic optoelectronic circuits is achieving compatibility of the processing technology of the electronic and optical components. We report a new approach to OEIC's based on a new family of inversion channel devices. The inversion channel in these devices (electrons) is induced at a heterointerface by a charge sheet of donors placed at the heterointerface.