GaAs/AlGaAs quantum wells and double-heterostructure lasers grown by chemical beam epitaxy.

The growth system and growth kinectics of chemical beam epitaxy (MBE) are briefly described and its differences from molecular beam epitaxy (CBE) and organometallic chemical vapor deposition (OM-CVD) are discussed. We characterize the capability of this technique in preparing high quality multilayer heterostructures by growing GaAs/Al(x)Ga(1-x)As single and multiquantum wells and double-heterostructure lasers. Studies using low-temperature photoluminescence and excitation spectroscopy techniques show that on the average the quantum wells are similar in quality to similar structures from this laboratory grown by MBE and in some important respects, superior to those by OM-CVD.