Gain and refractive index dynamics in p-doped InAs quantum dash semiconductor optical amplifiers
18 July 2016
The ultrafast carrier dynamics in a p-doped dash-in-a-well structure at 1.5 mu m is experimentally investigated. An analysis of the timescales related to carrier relaxation and escape processes as well as the ``dynamical{''} linewidth enhancement factor is presented and compared with results obtained from similar un-doped materials. Intentional p-doping of the active region results in an enhancement of the intermediate timescale of the gain dynamics associated with phonon-assisted electron capture and a reduction of the a-factor due to increased differential gain. Published by AIP Publishing.