GaInAs/InP and GaInAsP/InP Quantum Well Structures by Gas Source Molecular Beam Epitaxy
01 May 1986
Quantum well structures containing single isolated quantum wells and superlattices of GaInAs/InP and GaInAsP/InP have been grown by Gas Source MBE in order to attempt to establish the limits of precision growth of these materials by this growth method. Single quantum wells with a quantum confinement luminescence spectral shift of 534 mev for GaInAs and of 450 mev for GaInAsP (1.5 micron nominal bandgap), both lattice matched to InP, were obtained.