GaInAs/InP Quantum Cascade Electroluminescent Devices

Quantum Cascade (QC) lasers are based on inter-subband transitions in the conduction band. This characteristic gives the flexibility to design the active region specifically to meet the user requirements, almost independently of the material chosen for its realization. So far, laser action has been reported in a great number of different material systems. On the other hand, among the important class of InP-based materials, the realization of a QC laser exploiting exclusively the GaInAs/InP heterostructure, is still missing. Here we present the realization of a GaInAs/InP quantum cascade electroluminescent device emitting at a wavelength of lambda ~ 10 mum. The difference with the previous InP-based QC lasers resides in the capability of building a completely Al-free laser both in the waveguide and in the active region.