GaInAsP/InP buried heterostructure formation by liquid phase epitaxy.

Two step liquid phase epitaxy is shown to be impeded in the GaInAsP system by the difficulty of achieving uniform epitaxial wetting and highly radiative interfaces. This problem is most severe on the {111}In plane and is shown to arise from s stochiometric disturbance at the etched surface due to unequal dissolution rates of the crystal components.