GaInAsP/InP heterostructure lasers emitting at 1.5 micron and grown by gas source molecular beam epitaxy.

Double heterostructure and separate confinement heterostructure lasers of Ga(x)In(1-x)As(1-y)P(y) lattice matched to InP and emitting at 1.5 micron have been grown by molecular beam epitaxy utilizing the decomposition of AsH(3) and PH(3) as a source of As(2) and P(2) molecules. Broad area lasers fabricated from the gas source molecular beam epitaxy wafers had pulsed room temperature threshold current densities (~2000 A/cm(2)) and differential quantum efficiencies (17 to 19%) that are comparable to state-of-the-art 1.5 micron broad area lasers grown by other methods. The gas source MBE method appears to yield highly uniform material.