GaInAs(P)/InP quantum well structures by gas source molecular beam epitaxy.
01 January 1986
Quantum well structures containing single isolated structures and superlattices of GaInAs/InP and GaInAsP/InP and GaInAsP/InP have been grown by gas source MBE to establish the current limits of dimensional precision for the growth of these materials and for evaluation of the method. Single quantum wells as thin as 5A with a quantum confinement spectral shift of 534 meV for GaInAs and 450 meV for GaInAsP have been demonstrated. The superlattice structures were grown in the form of p-i-n detectors. Their photocurrent response as a function of wavelength shows very well resolved exciton luminescence and a shift of the exciton energy with applied voltage.