Gallium- Arsenic-Induced Oscillations of Intensity of Reflection High-Energy Electron Diffraction in the Growth of (001) GaAs by Chemical Beam Epitaxy
01 January 1987
The observations of a damped intensity oscillation using reflection high-energy electron diffraction during the growth of GaAs by chemical beam epitaxy using triethylgallium and arsine are reported. It is experimentally demonstrated that the AS flux can be instantly shut off without any memory effect by measuring the Ga-induced intensity variation and the subsequent As-induced oscillations. The Ga deposition, free of any background As contamination, makes possible the direct determination of metal- alkyl adsorption and pyrolysis efficiency on the hot substrate surface.