Gamma-radiation effects on submicron MOSFETS.

In this paper, we report gamma-radiation effects on MOSFETS fabricated with NMOS submicron technology. We have investigated the radiation sensitivity of N-channel MOSFETS with L(eff) varying from 6 micron to 0.3 micron and with a gate oxide thickness of 250 angstroms. We observed that, for radiation doses =10**4 rads, the threshold shift is less than 75 mV and this shift is independent of the device geometry (even for L(eff) =0.3micron). We have also compared MOSFETS fabricated with x-ray lithography and optical lithography. The x-ray lithography does not have a significant effect on the radiation sensitivity of these MOSFETS.