GAS SOURCE MOLECULAR BEAM EPITAXY OF ALTERNATED TENSILE / COMPRESSIVE STRAINED GAINASP MULTIPLE QUANTUM WELLS EMITTING AT 1.5 MICRO-M

Compressive and tensile strained GaInAsP layers as well as zero-net strain multiple quantum wells, grown by gas source molecular beam epitaxy, have been investigated. Reflection high energy electron diffraction patterns show two-dimensional growth for compressive strained layers . Three-dimensional growth is observed after a few nanometers for tensile strained layers even for low tensile value . Transmission electron microscopy shows that three-dimensional growth of a tensile strained layer is related to a quasi-periodic composition modulation along the [110] in the epitaxial plane.