Gas source molecular beam epitaxy of GaInAs(P): Gas sources, single quantum wells, superlattice P-I-N's and bipolar transistors.

During the past year, the work on the use of Gas Source Molecular Beam Epitaxy (GSMBE) for the growth of GaInAs(P)/InP heterostructures has extended to the detailed study of a variety of heterostructures. This paper reviews some of the results of these studies. There has been a demonstration of single quantum wells as thin as 5Angstroms for both Ga(0.47)In(0.53)As and Ga(x)In (1-x)As (y)P(1-y) with near monolayer abruptness. Superlattices of these materials have been reported for the first time with the observation of exciton structure in the absorption and photoresponse spectra.