Gas source molecular beam epitaxy of InP, GaInAs and GaInAsP.

This paper is a review of gas source molecular beam epitaxy for a review paper in a special issue of Progress in Crystal Growth & Characterization, devoted to aspects of epitaxy. It includes a detailed discussion of various approaches that have been used for the generation of As(2) and P(2) beams for MBE by the decomposition of AsH(2) and PH(3) and descriptions of the materials, devices and research structures that have been grown at Bell Labs with this epitaxy procedure.