Gate-Controlled Kondo Effect in a Single Molecule Transistor with Elliptical Ferromagnetic Leads
13 October 2017
We present low temperature transport measurements of C60-based single molecule transistors fabricated using ferromagnetic break junction devices with planar elliptical leads, revealing a gate-modulated single channel spin-1/2 Kondo effect. The shape anisotropy and dipole interaction of the source and drain electrodes allows for the relative alignment of their respective magnetic moments to be switched between a parallel and an antiparallel configuration. Both the ferromagnetism of the electrodes and the manipulation of their magnetization are shown to impact the magnetotransport in the Kondo regime in a manner consistent with analytical results, but with a magnitude highly sensitive to the precise electrode-molecule geometry and the electrostatic environment.