Gate-coupling and floating body effects in thin-film SOI MOSFETs.

The operation of thin-film, silicon-on-insulator (SOI) MOSFETs permits bias-dependent suppression of the kink effect. For zero or positive back-gate bias, the well known kink effect is suppressed but the threshold voltage depends strongly on back-gate bias. For sufficiently negative back-gate bias (as might be required for total-dose radiation-hard applications), the kink effect re-emerges and the threshold voltage depends instead on the applied drain voltage.