Gate Oxides in 50nm Devices: Thickness Uniformity Improves Projected Reliability

We demonstrate that reliability projections can be improved significantly if oxide thickness uniformity is improved. Our results indicate that 1.6nm oxides could be operated at 1.2V and 65C even if failure at soft breakdown is assumed. Data from 50nm gate-length transistors with 1.5nm oxides exhibiting soft breakdown are presented.