Generic Reliability of the High-Conductivity TaSi2/n+ Poly-Si Gate MOS Structure

Results are presented on the generic reliability of the TaSi2/n+ poly-Si gate structure which has a stable sheet resistance of ~2 ohm/sq and which retrofits into the conventional n-channel Si-gate process sequence. The MOS and IGFET parameters are well-behaved, i.e., determined by the n+ poly-Si layer of the composite. The static and dynamic bias-temperature stabilities are excellent for the presently employed sequence of process steps. Certain process and structure limitations do exist, and these have been defined.