Geometry Scalable Compact Modeling of III-V DHBTs for Terahertz Applications Part II: Physical Simulation
28 March 2019
The transit times of double heterojunction bipolar transistors (DHBTs) based on InGaAs/InP and GaAsSb/InP technologies are investigated by means of two different physical modeling techniques, specifically the physics-based compact model HiCuM/L2 and a combined approach relying on a 1-D, full-band, atomistic quantum transport (QT) solver coupled with 2-D hydrodynamic (HD) simulation. Both frameworks exhibit good agreement with the experimental measurements, which provide a basis for structure and performance optimization towards real terahertz (THz) devices. Benefits and drawbacks of the two simulation strategies are discussed.