Germanium doping of InP films grown by liquid phase epitaxy.

We have investigated Ge doping at high concentrations in InP films grown at 648-640C on 100> InP by liquid phase epitaxy. Hall measurements show that the carrier concentration saturates at ~9 x 10(18)/cm(3) for a mole fraction of Ge in the liquid x(Ge)(l) greater than 0.10. In the carrier saturation regime, the Ge concentration in the solid, as measured by secondary ion mass spectroscopy, increases superlinearly with x(Ge)(l). Transmission electron microscopy reveals no precipitate formation.